applications: motor control industrial and domestic lighting heating static switching blocking voltage to 800 v on-state rms current to 10 a ultra low gate trigger current features description glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. these devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. pin description 1 2 3 cathode anode gate simplified outline to-220c symbol a g k unit symbol parameter v drm 400 600 800 i trms 10 mcr310-6g mcr310-8g MCR310-10G repetitive peak off-state voltages on-state rms current i tsm 100 v v a a peak non-repetitive surge current symbol parameter max unit conditions typ min rth j-a thermal resistance junction to ambient - /w - 60 rth j-c thermal resistance junction to case /w 2.2 - - (tj=-40 to 110 c 1/2sine wave,rgk=1k o value pb free plating product mcr310-6g thru MCR310-10G sensitive & standard(10a scrs) pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 ? mcr310-6g thru MCR310-10G 1 2 3
limiting values in accordance with the maximum system(iec 134) a a a as 2 symbol parameter conditions min max unit symbol parameter conditions min v v drm rrm i t(rms) i tsm it 2 i gm v gm p gm t stg t j p g(av) repetitive peak off-state voltages rms on-state current non-repetitive peak on-state current i t for fusing 2 forward peak gate current peak gate voltage peak gate power average gate power storage temperature operating junction temperature range v v a w w 180 cconduction angles;tc=75 0 1/2cycle.60 hz, tj=-40 to110 tj=-40to110,1/2sine wave,rgk=1k t=8.3ms mcr310-6 mcr310-8 mcr310-10 t<=10us,tc=83 t<=10us,tc=83 t<=10us,tc=83 t<=10us,tc=83 - - - - - - - - - -40 -40 400 600 800 +110 t =25 c unless otherwise stated j o static characteristics i gt i i drm rrm i h v tm v gt v gd dynamic characteristics d/dt v t gt t g gate trigger current peak forward blocking current tj=110 c,v =rated v o d drm tc=110 tc=25 tc=110 tc=25 peak reverse blocking current tj=110 c,v =rated v o r rrm holding current peak forward on-state voltage gate trigger voltage gate non-trigger voltage critical rate of rise of off-state voltage gate controlled turn-on crcuit commutated tum- off time time v =12v; rl=100 d v =12v;itm=100ma d v =12v;rl=100 d i =20a peak,pulse width<=1ms tm v =rated v ;r =10k t =110 d drm l j unit max typ - - - 0.1 - - - - - - 6 10 1 - - 0.5 1.7 - - ma v v v rated v ,r =1k ;tj=110 ; d= drm gk exponential waveform; i =16a;v =rated v ,ig=2ma tm d drm 200 30 -- - - 500 10 500 10 10 100 - 40 1.5 2.2 v 1.0 5 5 0.75 +150 + s s v/ s a a a - ? mcr310-6g thru MCR310-10G ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3
description ? mcr310-6g thru MCR310-10G ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3
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